High-K dielectric reduced surface field (RESURF) effects in high-voltage bulk FinFETs through three-dimensional simulation are discussed in this paper for the first time. Compared to a planar gate LDMOSFET where the length of the drift region is the same. dielectric RESURF significantly increases the optimal implant dose for the drift region to a higher value. although BV2/Ron. https://danddcollectiblers.shop/product-category/stands/